Application of GaN-based heterojunction FETs for advanced wirelesscommunication

We review the features of GaN-based FETs and describe their expected development direction, GaN has a high breakdown field, but this does not necessarily mean it is suitable for high-voltage and high-power applications. The main advantage is that it enables scaling down beyond the silicon MOSFET miniaturization limitation from the Maxwell-Boltzmann distribution. Thus, fine gate patterns together with a high carrier velocity make GaN-based FETs be suited for millimeter and near millimeter wavelength high-power applications. In addition, by using large-area sapphire substrates, high-performance and low-cost MMICs can be produced on GaN. We expect that such devices will be the key to future advanced wireless communication systems