A high resolution method for measuring hot carrier degradation in matched transistor pairs

A new measurement methodology has been developed in order to perform high-resolution measurements of the hot carrier degradation on MOSFET's. With this methodology, degradations as low as 0.01% can be measured accurately. The high resolution measurements are necessary for measuring hot carrier degradation in matched transistor pairs. This is demonstrated by comparing the degradation at different stress conditions. A linear extrapolation is not applicable when extrapolating the degradation curves from 1 % to 100 ppm.