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p+p型半导体气体传感器原理
引用本文:杨留方,赵鹤云,唐启祥,王毓德,吴兴惠. p+p型半导体气体传感器原理[J]. 仪表技术与传感器, 2004, 0(6): 1-2,12
作者姓名:杨留方  赵鹤云  唐启祥  王毓德  吴兴惠
作者单位:1. 云南大学佐波传感技术研究中心,云南,昆明,650091;玉溪师范学院物理系,云南,玉溪,650031
2. 云南大学佐波传感技术研究中心,云南,昆明,650091
摘    要:p p型半导体气体传感器是基于气体传感器互补反馈原理的一种新结构半导体气体传感器。该传感器由两种传导类型相同的敏感体A和B构成,A和B都是p型半导体材料。理论分析表明:当敏感体A和B满足一定条件时。该传感器可获得高的选择性和好的热稳定性,同时可减少零点漂移,缩短初期驰豫时间,提高抗湿干扰能力。文中在理论上给出了实现上述特性的条件。该传感器原理是通用的理论,对各种具有不同气敏特性的材料组合均适用。

关 键 词:气体传感器 p+p型结构 互补反馈 选择性 热稳定性 灵敏度
文章编号:1002-1841(2004)06-0001-02

Study on Theory of p+p Combined Structure Semiconductor Gas Sensor
YANG Liu-fang. Study on Theory of p+p Combined Structure Semiconductor Gas Sensor[J]. Instrument Technique and Sensor, 2004, 0(6): 1-2,12
Authors:YANG Liu-fang
Abstract:P+P structure semiconductor gas sensor based on the compensation-feedback principle is a new type gas sensor.The sensor is composed of two sensitive materials A and B whose conductive types are the same.The materials A and B are all P-type materials.The results and analyzed from a theoretical viewpoint shows that the P+P combined structure semiconductor gas sensor has higher selectivity,better thermal stability,smaller zero drift,shorter time of begin relaxation and enhanced ability against humid influence when the materials A and B satisfied certain conditions.The conditions to achieve these characteristics of the P+P combined structure semiconductor gas sensor were presented.The principle of the P+P combined structure semiconductor gas sensor is a commonly used theory that is feasible in combination of many sensitive materials.
Keywords:Gas Sensor  P+P Combined Structure  Compensation-feedback  Selectivity  Thermal Stability  Sensitivity
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