| 硅基锗表层集成型PIN光电探测器的设计 |
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| 引用本文： | 徐春凤,王艳春.硅基锗表层集成型PIN光电探测器的设计[J].长春光学精密机械学院学报,2013(3):104-106. |
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| 作者姓名： | 徐春凤 王艳春 |
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| 作者单位： | 长春理工大学计算机科学技术学院,长春130022 |
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| 摘 要： | 本文将主要讨论锗薄膜表层PIN光电探测器的设计。包括过渡层在内的锗薄膜层,设备能够很好的接收硅波导信号并且在重掺杂p＋/n＋区域的表层结构下能够达到较高的灵敏度。通过缩短p＋/n＋距离,探测器在-5V加压下,频宽可以达到22GHz。
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| 关 键 词： | 锗薄膜表层 PIN结构 光电探测器 |
The Design of Thin-film-Ge PIN Photodetectors Integrated on Si Waveguide |
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| XU Chunfeng,WANG Yanchun.The Design of Thin-film-Ge PIN Photodetectors Integrated on Si Waveguide[J].Journal of Changchun Institute of Optics and Fine Mechanics,2013(3):104-106. |
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| Authors: | XU Chunfeng WANG Yanchun |
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| Affiliation: | (School of Computer Science,Changchun University of Science and Technology,changchun 130022) |
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| Abstract: | In this paper,the thin-film-Ge surface PIN photodetectors is discussed.Including buffer layers of the thin Ge layer,the mechanism reponse the incoming Si waveguide well and can achieve high responsivity because of the layout of the highly-doped p＋/n＋ region.The mechanism shows speed of～22GHz at the bias of-5V if you shrink the p＋/n＋ spacing of the device. |
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| Keywords: | Ge PINstructure photodetector |
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