| 射频磁控溅射中偏压对薄膜污染的影响 |
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| 引用本文： | 公发全,李刚,吕起鹏,贾春燕,刘万发,董闯. 射频磁控溅射中偏压对薄膜污染的影响[J]. 长春光学精密机械学院学报, 2013, 0(3): 63-64,94 |
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| 作者姓名： | 公发全 李刚 吕起鹏 贾春燕 刘万发 董闯 |
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| 作者单位： | [1]中国科学院化学激光重点实验室,中国科学院大连化学物理研究所,大连116023 [2]大连理工大学,三束材料改性教育部重点实验室,大连116024 [3]长春理工大学理学院,长春130022 |
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| 基金项目： | 中国科学院大连化学物理研究所创新基金项目（K2010B1） |
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| 摘 要： | 薄膜溅射过程中杂质污染问题是影响薄膜质量的重要因素,会造成薄膜的吸收和散射损耗增大、结合力下降,形成针孔等。采用射频磁控溅射沉积氧化铝薄膜时,发现在不同负偏压条件下,真空室内的金属离子会造成不同程度薄膜污染,采用XPS对污染物进行了测试表征,并对污染来源进行了分析,最后得出结论：在较高负偏压条件下真空室器壁金属溅射,是造成镀制氧化铝薄膜的重要污染源。
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| 关 键 词： | 射频磁控溅射 氧化铝薄膜 偏压 薄膜污染 |
Effect of Bias Voltage on Coating Contamination in RF Magnetron Sputtering |
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| GONG Faquan,LI Gang,LV Qipeng,JIA Chunyan,LIU Wanfa,DONG Chuang. Effect of Bias Voltage on Coating Contamination in RF Magnetron Sputtering[J]. Journal of Changchun Institute of Optics and Fine Mechanics, 2013, 0(3): 63-64,94 |
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| Authors: | GONG Faquan LI Gang LV Qipeng JIA Chunyan LIU Wanfa DONG Chuang |
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| Affiliation: | 1.Key Laboratory of Chemical Lasers,Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023;2.Key Laboratory of Materials Modification,Ministry of Education,Dalian University of Technology,Dalian 116024;3.School of Physics,Changchun University of Science and Technology,Changchun 130022) |
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| Abstract: | Coating contamination caused by the coating process itself is a key problem which can lead to absorption,scatting,pinholes,adhesion failure.In this paper,alumina coating is deposited by RF magnetron sputtering under deferent minus bias voltage,coating contamination in different degree is found.The contaminants are characterized by XPS,and the source of coating contaminants is analyzed.At last,a conclusion is drawn,that the important source is the metal particles sputtered from the coating vacuum chamber in high minus bias voltage. |
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| Keywords: | RF magnetron sputter alumina coating bias voltage coating contamination |
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