Impact ionization and distribution functions in sub-micron nMOSFETtechnologies |
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| Authors: | Bude JD Mastrapasqua M |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
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| Abstract: | The physics of impact ionization generated substrate current in 0.1 μm nMOSFET's technologies is clarified by comparison of experiment and full-band Monte Carlo (MC) simulation for a wide range of biases. Quasiballistic transport is confirmed. It is shown for the first time that these devices allow extraction of ionization probabilities near threshold from substrate current measurements |
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