Compositional and metal-insulator transition characteristics of sputtered vanadium oxide thin films on yttria-stabilized zirconia

Vanadium dioxide (VO₂) thin films have been shown to undergo a rapid electronic phase transition near 70 °C from a semiconductor to a metal, making it an interesting candidate for exploring potential application in high speed electronic devices such as optical switches, tunable capacitors, and field effect transistors. A critical aspect of lithographic fabrication in devices utilizing electric field effects in VO₂ is the ability to grow VO₂ over thin dielectric films. In this article, we study the properties of VO₂ grown on thin films of Yttria-Stabilized Zirconia (YSZ). Near room temperature, YSZ is a good insulator with a high dielectric constant ($\epsilon _{\rm r} > 25$\epsilon _{\rm r} > 25). We demonstrate the sputter growth of polycrystalline VO₂ on YSZ thin films, showing a three order resistivity transition near 70 °C with transition and hysteresis widths of approximately 7 °C each. We examine the relationship between chemical composition and transition characteristics of mixed phase vanadium oxide films. We investigate changes in composition induced by low temperature post-deposition annealing in oxidizing and reducing atmospheres, and report their effects on electronic properties.