High rate of copper electrodeposition from the hexafluorosilicate bath |
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Authors: | Petr V Dudin |
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Affiliation: | Research Institute of Physical and Chemical Problems, Belarusian State University, Minsk, Leningradskaya str.-14, r.611, 220030, Republic of Belarus |
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Abstract: | A high-rate copper electrodeposition performed from a hexafluorosilicate bath is presented in this article. It is shown that the current density for electrodeposition ranges from 1 to 30 A dm− 2 and the optimal suggested current density is 15 A dm− 2 or a rate of 200 μm h- 1. High plating rate is due to a higher mass transport through the hexafluorosilicate media when compared to a conventional sulphate-based bath. The microstructure, texture and mean grain size of the 30 μm-thick films plated from the additive free bath and the bath containing 10− 3 mol dm− 3 thiourea and 500 ppm Cl− is studied with respect to the applied current density. Copper plated from the bath without additives has a macrocrystalline structure with preferable 110 texture and mean grain size of 65-85 nm, while thiourea produces a microsmooth surface and 111 texture with grain size of 40-70 nm. |
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Keywords: | Copper Electrodeposition Hexafluorosilicate Nucleation and growth Plating Thiourea |
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