| 具有P型浮空区的槽栅IGBT结构 |
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| 引用本文： | 钱梦亮,李泽宏,张波,李肇基.具有P型浮空区的槽栅IGBT结构[J].半导体学报,2010,31(2):024003-3. |
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| 作者姓名： | 钱梦亮 李泽宏 张波 李肇基 |
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| 作者单位： | State;Laboratory;Electronic;Thin;Films;lntegrated;Devices;University;Science;Technology;China;Integrated; |
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| 摘 要： | 本文提出了一种具有P型浮空层的新型槽栅IGBT结构，它是在之前所提的一种积累层沟道控制的槽栅IGBT(TAC-IGBT)基础之上引入了一浮空P型层。此结构在维持原有TAC-IGBT低的正向导通压降和更大正向偏置安全工作区（FBSOA）的同时，减小了器件的泄漏电流，提高了器件的击穿电压，也使得器件的短路安全工作区大大提高，且制造简单，设计裕度增大。仿真结果表明：对于1200V的IGBT器件，具有P型浮空层的新型槽栅IGBT结构漏电比TAC-IGBT小近一个量级，击穿电压提高近150V。
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| 关 键 词： | IGBT 结构 P区 浮动 安全工作区 海沟 击穿电压 正向偏置 |
| 收稿时间： | 8/2/2009 8:38:10 PM |
Trench gate IGBT structure with floating P region |
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| Qian Mengliang,Li Zehong,Zhang Bo and Li Zhaoji.Trench gate IGBT structure with floating P region[J].Chinese Journal of Semiconductors,2010,31(2):024003-3. |
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| Authors: | Qian Mengliang Li Zehong Zhang Bo and Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A new trench gate IGBT structure with a floating P region is proposed, which introduces a floating P region into the trench accumulation layer controlled IGBT (TAC-IGBT). The new structure maintains a low on-state voltage drop and large forward biased safe operating area (FBSOA) of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage. In addition, it enlarges the short circuit safe operating area (SCSOA) of the TAC-IGBT, and is simple in fabrication and design. Simulation results indicate that, for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT. |
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| Keywords: | TAC-IGBT CT-IGBT accumulation channel floating P region SCSOA |
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