Fully-depleted SOI CMOS for analog applications |
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| Authors: | Colinge J.-P. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Davis, CA; |
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| Abstract: | Fully-depleted (FD) SOI MOSFETs offer near-ideal properties for analog applications. In particular their high transconductance to drain current ratio allows one to obtain a higher gain than from bulk devices, and the reduced body effect permits one to fabricate more efficient pass gates. The excellent behavior of SOI MOSFETs at high temperature or at gigahertz frequencies is outlined as well |
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