| 辐射对深亚微米NMOS器件热载流子效应的影响 |
| |
| 引用本文： | 崔江维,郑齐文,余学峰,丛忠超,周航,郭旗,文林,魏莹,任迪远. 辐射对深亚微米NMOS器件热载流子效应的影响[J]. 半导体学报, 2014, 35(7): 074004-4 |
| |
| 作者姓名： | 崔江维 郑齐文 余学峰 丛忠超 周航 郭旗 文林 魏莹 任迪远 |
| |
| 基金项目： | 微纳MOS器件空间辐射效应数值模拟与试验研究 |
| |
| 摘 要： | We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.
|
| 关 键 词： | 深亚微米 热载流子效应 NMOS器件 辐照 热载流子退化 NMOSFET 几何形状 陷阱电荷 |
Hot-carrier effects on irradiated deep submicron NMOSFET |
| |
| Cui Jiangwei,Zheng Qiwen,Yu Xuefeng,Cong Zhongchao,Zhou Hang,Guo Qi,Wen Lin,Wei Ying and Ren Diyuan. Hot-carrier effects on irradiated deep submicron NMOSFET[J]. Chinese Journal of Semiconductors, 2014, 35(7): 074004-4 |
| |
| Authors: | Cui Jiangwei Zheng Qiwen Yu Xuefeng Cong Zhongchao Zhou Hang Guo Qi Wen Lin Wei Ying Ren Diyuan |
| |
| Affiliation: | Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China |
| |
| Abstract: | F ray irradiation deep submicron hot-carrier effect |
| |
| Keywords: | F ray irradiation deep submicron hot-carrier effect |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
