| 具有背面反射镜的GaN基高压LED |
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| 引用本文： | 黄华茂,王洪,黄晓升,胡金勇.具有背面反射镜的GaN基高压LED[J].半导体学报,2014,35(7):074013-5. |
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| 作者姓名： | 黄华茂 王洪 黄晓升 胡金勇 |
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| 基金项目： | 广东省战略性新兴产业发展专项资金（2010A081002009、2011A081301004、2012A080302003）、广州市重大科技专项（2011Y5-00006）和中央高校基本科研业务费专项资金（2013ZM093、2013ZP0017） |
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| 摘 要： | High-voltage light-emitting diodes （HV-LED） with backside reflector, including Ti305/SiO2 distributed Bragg reflector （DBR） or hybrid reflector combining DBR and Al or Ag metal layer, are investigated using Monte Carlo ray tracing method. The hybrid reflector leads to more enhancement of light-extraction efficiency （LEE）. Moreover, the LEE can also be improved by redesigning the thicknesses of DBR. HV-LED with four redesigned DBR pairs （4-MDBR）, and those with a hybrid reflector combining 4-MDBR and Al metal layer （4-MDBR-Al）, are fabricated. Compared to 4-MDBR, the enhancement of light-output power induced by 4-MDBR-A1 is 4.6%, which is consistent with the simulated value of 4.9%.
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| 关 键 词： | 发光二极管 反射镜 背面 高电压 GaN 布拉格反射器 设计厚度 光线追迹法 |
GaN-based high-voltage light-emitting diodes with backside reflector |
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| Huang Huamao,Wang Hong,Huang Xiaosheng and Hu Jinyong.GaN-based high-voltage light-emitting diodes with backside reflector[J].Chinese Journal of Semiconductors,2014,35(7):074013-5. |
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| Authors: | Huang Huamao Wang Hong Huang Xiaosheng and Hu Jinyong |
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| Affiliation: | Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology, Guangzhou 510640, China;Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology, Guangzhou 510640, China;Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology, Guangzhou 510640, China;Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology, Guangzhou 510640, China |
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| Abstract: | High-voltage light-emitting diodes (HV-LED) with backside reflector, including Ti3O5/SiO2 distributed Bragg reflector (DBR) or hybrid reflector combining DBR and Al or Ag metal layer, are investigated using Monte Carlo ray tracing method. The hybrid reflector leads to more enhancement of light-extraction efficiency (LEE). Moreover, the LEE can also be improved by redesigning the thicknesses of DBR. HV-LED with four redesigned DBR pairs (4-MDBR), and those with a hybrid reflector combining 4-MDBR and Al metal layer (4-MDBR-Al), are fabricated. Compared to 4-MDBR, the enhancement of light-output power induced by 4-MDBR-Al is 4.6%, which is consistent with the simulated value of 4.9%. |
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| Keywords: | high-voltage light-emitting diodes hybrid backside reflector distributed Bragg reflector metal reflector light extraction efficiency |
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