| 一种采用多个渐变反型电荷层优化电场的LDMOST |
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| 引用本文： | 成建兵,夏晓娟,蹇彤,郭宇峰,于舒娟,杨浩.一种采用多个渐变反型电荷层优化电场的LDMOST[J].半导体学报,2014,35(7):074007-4. |
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| 作者姓名： | 成建兵 夏晓娟 蹇彤 郭宇峰 于舒娟 杨浩 |
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| 作者单位： | [1]School of Electronic Science ＆ Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing Universityof Posts and Telecommunications, Nanjing 210003, China [2]National Application-Specific Integrated Circuit （ASIC） System Engineering Research Center, Southeast University, Nanjing210096, China |
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| 基金项目： | 国家自然科学基金;省自然科学基金;中国博士后基金 |
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| 摘 要： | A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.
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| 关 键 词： | LDMOST 电场分布 半导体场效应晶体管 电荷 反向 优化 击穿电压 正区域 |
| 修稿时间： | 2/5/2014 12:00:00 AM |
Electric field optimized LDMOST using multiple decrescent and reverse charge regions |
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| Cheng Jianbing,Xia Xiaojuan,Jian Tong,Guo Yufeng,Yu Shujuan and Yang Hao.Electric field optimized LDMOST using multiple decrescent and reverse charge regions[J].Chinese Journal of Semiconductors,2014,35(7):074007-4. |
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| Authors: | Cheng Jianbing Xia Xiaojuan Jian Tong Guo Yufeng Yu Shujuan and Yang Hao |
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| Affiliation: | School of Electronic Science & Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;National Application-Specific Integrated Circuit (ASIC) System Engineering Research Center, Southeast University, Nanjing 210096, China;School of Electronic Science & Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;School of Electronic Science & Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;School of Electronic Science & Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;School of Electronic Science & Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;School of Electronic Science & Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing University of Posts and Telecommunications, Nanjing 210003, China |
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| Abstract: | A lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOST) with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribution is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions'lengths. |
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| Keywords: | LDMOST multiple decrescent and reverse charge regions electric field breakdown voltage on-resistance |
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