| 采用Ni/Ti/Ni多层金属在N型4H-SiC衬底改善粘附性和界面的欧姆接触 |
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| 引用本文： | 韩林超,申华军,刘可安,王弋宇,汤益丹,白云,许恒宇,吴煜东,刘新宇. 采用Ni/Ti/Ni多层金属在N型4H-SiC衬底改善粘附性和界面的欧姆接触[J]. 半导体学报, 2014, 35(7): 072003-4 |
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| 作者姓名： | 韩林超 申华军 刘可安 王弋宇 汤益丹 白云 许恒宇 吴煜东 刘新宇 |
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| 基金项目： | 国家科技重大专项;国家自然科学基金 |
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| 摘 要： | The Ni/Ti/Ni multilayer ohmic contact properties on a 4H-SiC substrate and improved adhesion with the Ti/Au overlayer have been investigated. The best specific contact resistivity of 3.16 × 10^-5 Ω.cm^2 was obtained at 1050 ℃. Compared with Ni/SiC ohmic contact, the adhesion between Ni/Ti/Ni/SiC and the Ti/Au overlayer was greatly improved and the physical mechanism under this behavior was analyzed by using Raman spectroscopy and X-ray energy dispersive spectroscopy （EDS） measurement. It is shown that a Ti-carbide and Ni-silicide compound exist at the surface and there is no graphitic carbon at the surface of the Ni/Ti/Ni structure by Raman spectroscopy, while a large amount of graphitic carbon appears at the surface of the Ni/SiC structure, which results in its bad adhesion. Moreover, the interface of the Ni/Ti/Ni/SiC is improved compared to the interface of Ni/SiC.
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| 关 键 词： | 4H-SiC 镍硅化物 欧姆接触 界面相 衬底 粘合性 复合材料结构 钛 |
Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni |
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| Han Linchao,Shen Huajun,Liu Kean,Wang Yiyu,Tang Yidan,Bai Yun,Xu Hengyu,Wu Yudong and Liu Xinyu. Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni[J]. Chinese Journal of Semiconductors, 2014, 35(7): 072003-4 |
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| Authors: | Han Linchao Shen Huajun Liu Kean Wang Yiyu Tang Yidan Bai Yun Xu Hengyu Wu Yudong Liu Xinyu |
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| Affiliation: | Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China;Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China;Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | ohmic contact SiC Ni/Ti/Ni Ni2Si |
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| Keywords: | ohmic contact SiC Ni/Ti/Ni Ni2Si |
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