| 采用浮空场限制环的耐压10kV碳化硅二极管的开发 |
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| 引用本文： | 黄润华,陶永洪,曹鹏飞,汪玲,陈刚,柏松,栗瑞,李赟,赵志飞.采用浮空场限制环的耐压10kV碳化硅二极管的开发[J].半导体学报,2014,35(7):074005-4. |
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| 作者姓名： | 黄润华 陶永洪 曹鹏飞 汪玲 陈刚 柏松 栗瑞 李赟 赵志飞 |
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| 摘 要： | The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2.
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| 关 键 词： | 4H-SiC 二极管 开发 掺杂浓度 击穿电压 数值模拟 导通电压 电特性 |
Development of 10 kV 4H-SiC JBS diode with FGR termination |
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| Huang Runhu,Tao Yonghong,Cao Pengfei,Wang Ling,Chen Gang,Bai Song,Li Rui,Li Yun and Zhao Zhifei.Development of 10 kV 4H-SiC JBS diode with FGR termination[J].Chinese Journal of Semiconductors,2014,35(7):074005-4. |
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| Authors: | Huang Runhu Tao Yonghong Cao Pengfei Wang Ling Chen Gang Bai Song Li Rui Li Yun and Zhao Zhifei |
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| Affiliation: | Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China |
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| Abstract: | 4It-SiC JBS diodes edge termination floating guard rings |
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| Keywords: | 4H-SiC JBS diodes edge termination floating guard rings |
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