Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation |
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Authors: | M. Sridharan Sa. K. Narayandass D. Mangalaraj Hee Chul Lee |
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Affiliation: | a Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046, India;b Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Taejon 301 705, South Korea |
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Abstract: | Polycrystalline Cd0.96Zn0.04Te thin films are deposited onto glass substrates (Corning 7059) kept at room temperature by vacuum evaporation. The films exhibit zinc blende structure with predominant (1 1 1) orientation. The rms roughness of the films evaluated by atomic force microscope is 3.7 nm. The band gap energy of the films measured by optical transmittance measurement is 1.539 eV. The photoluminescence (PL) spectrum of the films shows intense emission due to free and bound exciton recombination and no emission associated with crystal imperfection and PL line shapes give indications of the high quality of the layers. These films have been implanted with properly mass analyzed Boron ions (10B+) and the effect of implantation has been analyzed by X-ray diffraction, Raman scattering and optical transmittance measurements and the results are explained on the basis of the implantation induced surface roughness and lattice disorder. |
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Keywords: | Cd0.96Zn0.04Te films XRD Photoluminescence 10B+ Implantation Raman scattering Optical properties |
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