| 不同结构的反射式GaAs光电阴极的光谱特性比较 |
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| 引用本文： | 高频,张益军.不同结构的反射式GaAs光电阴极的光谱特性比较[J].红外技术,2011,33(7):429-432. |
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| 作者姓名： | 高频 张益军 |
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| 作者单位： | 南京理工大学,电子工程与光电技术学院,江苏,南京,210094 |
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| 基金项目： | 国家自然科学基金项目,编号:60678043,60801036 |
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| 摘 要： | 利用分子束外延生长了三种结构的反射式GaAs光电阴极,其中一种为传统结构的反射式GaAs光电阴极,另外两种为具有GaAlAs缓冲层的均匀掺杂和梯度掺杂反射式GaAs光电阴极.激活后的光谱响应测试结果表明,与传统结构的反射式GaAs光电阴极相比,具有GaAlAs缓冲层的均匀掺杂反射式GaAs光电阴极的长波响应更好,而具有...
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| 关 键 词： | GaAs光电阴极 反射式 光谱响应 缓冲层 梯度掺杂 |
Comparison of Spectral Characteristics on Different Reflection-Mode GaAs Photocathodes |
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| GAO Pin,ZHANG Yi-jun.Comparison of Spectral Characteristics on Different Reflection-Mode GaAs Photocathodes[J].Infrared Technology,2011,33(7):429-432. |
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| Authors: | GAO Pin ZHANG Yi-jun |
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| Affiliation: | GAO Pin,ZHANG Yi-jun(Institute of Electronic Engineering and Optoelectronic Technology,NanJing University Of Science and Technology,NanJing 210094,China) |
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| Abstract: | Three types of reflection-mode GaAs photocathodes were grown by molecular beam epitaxy,in which one sample is a traditional reflection-mode GaAs photocathode,and the other two samples are the GaAlAs buffer layer based uniform-doping and gradient-doping GaAs reflection-mode GaAs photocathodes.The spectral response test results after activation experiments show that compared with the traditional reflection-mode GaAs photocathode,the GaAlAs buffer layer based uniform-doping reflection-mode one obtains a better... |
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| Keywords: | GaAs photocathode reflection-mode spectral response buffer layer gradient-doping |
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