| Si+自注入Si晶体中缺陷分布的计算模拟 |
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| 引用本文： | 周原, 韦冬, 王茺, 杨宇. Si+自注入Si晶体中缺陷分布的计算模拟[J]. 红外技术, 2011, 33(7): 380-384. DOI: 10.3969/j.issn.1001-8891.2011.07.002 |
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| 作者姓名： | 周原 韦冬 王茺 杨宇 |
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| 作者单位： | 云南大学光电信息材料研究所,云南,昆明,650091 |
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| 基金项目： | 国家自然科学基金项目,编号:10964016和10990101; 教育部科学技术研究重点项目,编号:210207; 云南大学理工基金项目,编号:2009E27Q |
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| 摘 要： | 在两体近似碰撞模型基础上,采用SRIM程序对自注入硅离子及其造成的损伤在样品的分布进行了研究,模拟了Si<'+>自注入si晶体的Si<'+>深度分布几率和注入时的能量传递.计算结果表明:在相同注入能量的情况下,注入Si<'+>的分布概率是恒定的,在注入过程中电离能是阻止Si<'+>进一步深入的主导因素.论文还初步讨论了注入剂量和退火温度对发光强度的影响,以及W缺陷的可能形成原因.
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| 关 键 词： | SRIM程序 Si+ 自注入 W缺陷 D1线 |
Calculations of the Defect Distribution in the Self-ion Implanted Si Wafer |
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| ZHOU Yuan, WEI Dong, WANG Chong, YANG Yu. Calculations of the Defect Distribution in the Self-ion Implanted Si Wafer[J]. Infrared Technology , 2011, 33(7): 380-384. DOI: 10.3969/j.issn.1001-8891.2011.07.002 |
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| Authors: | ZHOU Yuan WEI Dong WANG Chong YANG Yu |
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| Affiliation: | ZHOU Yuan,WEI Dong,WANG Chong,YANG Yu(Institute of optoelectronic Information Materials,Yunnan University,Kunming 650091,China) |
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| Abstract: | Based on the binary collision approximation(BCA),the defect distribution in the self-ion implantation and its energy transfer in Si crystal had been investigated by using the SRIM program.The calculated results indicated that the distribution probability of implanted Si+ is constant in the crystal Si,if the implantation energies are the same.The dominating factor which stops the implanted Si+ further deepening is demonstrated to be the value of the ionization energy.In this paper,the effects of implanted do... |
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| Keywords: | SRIM Si Self-ion implantation W line D1 line |
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