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Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC |
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| Authors: | K Vassilevski K Zekentes K Tsagaraki G Constantinidis I Nikitina |
| Affiliation: | a Microelectronics Research Group, Foundation for Research and Technology-Hellas, P.O. Box 1527, Heraklion, Crete 71110, Greece b Ioffe Institute, 26 Polytechnicheskaya strasse, St. Petersburg 194021, Russia |
| Abstract: | Ohmic contacts to the top p-type layers of 4H-SiC p+–n–n+ epitaxial structures having an acceptor concentration lower than 1×1019 cm?3 were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid thermal anneal of multilayer A1/Ti/Pt/Ni metal composition led to the formation of duplex cermet composition containing Ni2Si and TiC phases. The decomposition of the SiC under the contact was found to be down to a depth of about 100 nm. The contacts exhibited a contact resistivity Rc of 9×10?5 Ω cm?2 at 21°C, decreasing to 3.1×10?5 Ω cm?2 at 186°C. It was found that thermionic emission through the barrier having a height of 0.097 eV is the predominant current transport mechanism in the fabricated contacts. |
| Keywords: | Silicon carbide Ohmic contacts Cermet Aluminum Thermionic emission |
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