| 太阳电池绒面测量与分析 |
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| 引用本文： | 孙铁囤,崔容强,王永东. 太阳电池绒面测量与分析[J]. 太阳能学报, 1999, 20(4): 422-425 |
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| 作者姓名： | 孙铁囤 崔容强 王永东 |
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| 作者单位： | 上海交通大学应用物理系太阳电能研究所,上海,200240 |
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| 摘 要： | 通过对ＭＯＳ结构电容的测量分析，计算出太阳电池表面积的变化，实现对电池绒面制作 工艺的控制与分析。实验数据与理论计算结果一致，通过ＭＯＳ系统的Ｃ－Ｖ特性测量可进一步对太阳的表面和界面特性作更加系统和深入的分析。
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| 关 键 词： | MOS 绒面测量 C－V特性 太阳电池 |
THE MEASUREMENTS AND ANALYSIS ON TEXTURING OF SOLAR CELL |
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| Sun Tietun,Cui Rongqiang,Wang Yongdong. THE MEASUREMENTS AND ANALYSIS ON TEXTURING OF SOLAR CELL[J]. Acta Energiae Solaris Sinica, 1999, 20(4): 422-425 |
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| Authors: | Sun Tietun Cui Rongqiang Wang Yongdong |
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| Abstract: | In this paper,the surface area of solar cell is determined by the capacitance measurements of MOS structure.The texture etching technology can be controlled according to change of surface area,Furthermore,the textured silicon surface and interface characteristic of solar cells can be studied by measuring the relationship of capacitance and voltage for MOS structure. |
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| Keywords: | MOS texture etching C V characteristic |
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