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适用于测量薄片材料复介电常数的改进TE01n腔法
引用本文:陈明妍,余剑平,徐得名. 适用于测量薄片材料复介电常数的改进TE01n腔法[J]. 电子测量与仪器学报, 2004, 18(2): 46-50,40
作者姓名:陈明妍  余剑平  徐得名
作者单位:上海大学通信与信息工程学院,上海高校介质测量基地,上海,200072;上海大学通信与信息工程学院,上海高校介质测量基地,上海,200072;上海大学通信与信息工程学院,上海高校介质测量基地,上海,200072
基金项目:国家自然科学基金,上海市教委资助项目
摘    要:本文提出一种适用于测量薄片材料复介电常数的改进TE01n谐振腔法.本方法将待测样品从短路活塞处抬高,即在待测薄片样品下面垫上已知复介电常数材料,以提高测量系统的灵敏度;如有必要也可以在待测薄片样品的上面压上一块已知复介电常数材料,提高样品材料的平整度,以减少空气隙带来的误差.文章推导了TE01n腔测量多层介质的理论计算公式,只要知道垫片和压块介质材料的复介电常数,通过实验测量和软件计算,就可以求得中间待测薄片的复介电常数.运用这种改进方案,我们对几种样品进行了测量,取得了较满意的结果.

关 键 词:薄片材料  复介电常数  TE01n腔

An Improved TE01n Resonant Cavity Measuring Method for Complex Permittivity of Thin Substrates
Chen MingYan Yu JianPing Xu DeMing. An Improved TE01n Resonant Cavity Measuring Method for Complex Permittivity of Thin Substrates[J]. Journal of Electronic Measurement and Instrument, 2004, 18(2): 46-50,40
Authors:Chen MingYan Yu JianPing Xu DeMing
Abstract:An improved TE01n resonant cavity method is presented for measuring the complex permittivity of thin substrates. Unlike the traditional method, the material under test (MUT) is positioned higher than the short plate of the cavity by laying a pre-assigned material under MUT in order to get higher measurement precision. Meanwhile, to minimize the influence of the air gap, another pre-assigned material is recommended to put on the top of the MUT. The whole measurement steps are described in detail as well as the corresponding calculation formulae. Experiments are carried out on several typical samples to validate the feasibility of our improved technique.
Keywords:Thin substrate   complex permittivity   TE 01n resonant cavity.
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