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高压IGCT缓冲电路的仿真与实验研究
引用本文:何人望,黄炜. 高压IGCT缓冲电路的仿真与实验研究[J]. 电力电子技术, 2007, 41(7): 83-85
作者姓名:何人望  黄炜
作者单位:华中科技大学,湖北,武汉,430074;华东交通大学,江西,南昌,330013;华中科技大学,湖北,武汉,430074
摘    要:针对6kV/1000kW高压变频器中集成门极换流晶闸管(Integnated Gate Commutation Thyristor,简称IGCT)的串联缓冲电路进行了设计.在分析串联缓冲电路的同时,计算了吸收电容和吸收电阻的取值范围.而后,对缓冲电路进行了PSIM仿真和试验,通过仿真和试验波形的比较,验证了缓冲电路的工作效果.结果表明,吸收电容和吸收电阻的取值合适,能够对IGCT起到很好的保护.

关 键 词:变频器  仿真/集成门极换流晶闸管  缓冲电路
文章编号:1000-100X(2007)07-0083-03
修稿时间:2006-11-17

Simulation and Experiment of IGCT's Snubber Circuit in High-voltage Inverter
HE Ren-wang,HUANG Wei. Simulation and Experiment of IGCT's Snubber Circuit in High-voltage Inverter[J]. Power Electronics, 2007, 41(7): 83-85
Authors:HE Ren-wang  HUANG Wei
Affiliation:1.Huazhong University of Science and Technology, Wuhan 430074, China; 2.East China Jiaotong University, Nanchang 30013, China
Abstract:Integrated Gate Commutation Thyristor's(IGCT) snubber circuit was designed for a 6kV/1000kW high-voltage inverter.RC-snubber circuit was selected and the value domain of capacity and resistance in this RC-snubber circuit was calculated.Then,the RC-snubber circuit was simulated by PSIM and experimented in laboratory.The efficiency of the RC-snubber circuit was compared between simulated and experimented waves.Results show that the RC-snubber circuit with the calculated value of capacity and resistance protects IGCT well.
Keywords:Inverter   simulation / integnated gate commutation thyristor   snubber circuit
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