Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates |
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Authors: | J H Lee Zh M Wang E S Kim N Y Kim S H Park G J Salamo |
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Affiliation: | (1) Department of Electronic Engineering, Kwangwoon University, Nowon-gu Seoul, 139-701, South Korea;(2) Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA |
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Abstract: | We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy.
Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring-like
and holed-triangular nanostructures. At near room temperatures, by limiting surface diffusion of adatoms, the size of In droplets
suitable for quantum confinement can be fabricated and thus InAs QDs are demonstrated on GaAs (100) surface. On the other
hand, at relatively higher substrate temperatures, by enhancing the surface migrations of In adatoms, super lower density
of InGaAs ring-shaped nanostructures can be fabricated on GaAs (100). Under an identical growth condition, holed-triangular
InGaAs nanostructures can be fabricated on GaAs type-A surfaces, while ring-shaped nanostructures are formed on GaAs (100).
The formation mechanism of various nanostructures can be understood in terms of intermixing, surface diffusion, and surface
reconstruction. |
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Keywords: | Droplet epitaxy Nanostructures High-index GaAs Atomic force microscope Molecular beam epitaxy |
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