| SI-GaAs晶片的PL mapping表征技术 |
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| 引用本文： | 李光平,汝琼娜,李静,何秀坤,王寿寅,陈祖祥. SI-GaAs晶片的PL mapping表征技术[J]. 功能材料与器件学报, 2000, 6(4): 365-368 |
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| 作者姓名： | 李光平 汝琼娜 李静 何秀坤 王寿寅 陈祖祥 |
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| 作者单位： | 1. 信息产业部电子第四十六研究所,天津55信箱,天津,300192
2. 北京伯乐分析生化仪器有限公司,北京100029 |
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| 摘 要： | 研究了扫描光致发光光谱（ＰＬｍａｐｐｉｎｇ）在表征半绝缘砷化镓（ＳＩ－ＧａＡｓ）材料中的应用,实验结果表明ＳＩ－ＧａＡｓ晶片的强度及ｍａｐｐｉｎｇ均匀性对器件性能有着十分密切的关系,所以在为制备器件筛选优质的ＳＩ－ＧａＡｓ材料时,除了电阻率、迁移率、位错密度,碳含量,ＥＬ２浓度及其均匀性,晶片表面质量上,ＰＬｍａｐｐｉｎｇ也是表征材料质量的一个重要参数。
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| 关 键 词： | 光致发光光谱 表征材料 半绝缘砷化镓 |
| 修稿时间： | : |
Characterization of PL mapping for SI-GaAs wafer |
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| LI Guang-ping,RU Qiong-na,LI Jing,HE Xiu-kun,WANG Shou-yin,CHEN Zu-xiang. Characterization of PL mapping for SI-GaAs wafer[J]. Journal of Functional Materials and Devices, 2000, 6(4): 365-368 |
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| Authors: | LI Guang-ping RU Qiong-na LI Jing HE Xiu-kun WANG Shou-yin CHEN Zu-xiang |
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| Affiliation: | LI Guang ping 1,RU Qiong na 1,LI Jing 1,HE Xiu kun 1,WANG Shou yin 2,CHEN Zu xiang |
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| Abstract: | In this paper, application of PL mapping to characterize SI GaAs crystal has been studied in detail. The experiment results show that PL mapping and its intensity of SI GaAs wafer plays an important role in determining the performance of device. When selecting high quality SI GaAs crystal for fabricating device, PL mapping homogeneity is an important parameter besides resistivity, mobilty, EPD, carbon concentration, EL2 concentration and their homogeneity, wafer surface quality. |
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| Keywords: | PL mapping Gallium arsenide Device characterization |
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