| 低介电常数纳米氧化硅薄膜(英文) |
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| 引用本文： | 沈军,朱玉梅,林雪晶,吴广明,周斌,倪星元,姚兰芳,汪国庆,汪培庆,汪庆峰,牛锡贤.低介电常数纳米氧化硅薄膜(英文)[J].稀有金属材料与工程,2010(Z2). |
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| 作者姓名： | 沈军 朱玉梅 林雪晶 吴广明 周斌 倪星元 姚兰芳 汪国庆 汪培庆 汪庆峰 牛锡贤 |
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| 作者单位： | 同济大学;上海理工大学;上海暄洋化工材料科技有限公司;中星电动车科技有限公司; |
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| 基金项目： | Chinese National Foundation of High Technology (2008AA8041606,2007AA804807, 2007AA804137); Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology (07DZ22302); Shanghai Educational Development Foundation (2007CG26); Program for Young Excellent Talents in Tongji University (2006KJ052); National Natural Science Foundation of China (50752001); Shanghai Committee of Science and Technology (055211010, 0652nm044, 07JC14052) |
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| 摘 要： | 介绍了一种新制备低介电常数 SiO2薄膜的方法。以 TEOS 为前躯体、盐酸为催化剂、CTAB 作为模版剂,采用溶胶-凝胶法制备硅溶胶,以浸渍提拉法制备薄膜。采用 FITIR、XRD 和 AFM 等方法表征了薄膜,并用阻抗分析仪测量介电常数。结果表明,通过调节 CTAB 的浓度和老化时间可以制得介电常数小于 2.2 的 SiO2 薄膜,薄膜拥有较好的机械强度和耐刮擦性,通过采用六甲基二硅胶烷(HMDS)对薄膜表面进行修饰,可以提高薄膜的疏水性能从而提高其在空气中的稳定性。
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| 关 键 词： | 低介电常数 薄膜 溶胶-凝胶法 |
Low Dielectric Constant Nanoporous Silica Films |
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| Shen Jun,Zhu Yumei,Lin Xuejing,Wu Guangming,Zhou Bin,Ni Xingyuan,Yao Lanfang,Wang Guoqing,Wang Peiqing,Wang Qingfeng,Niu Xixian.Low Dielectric Constant Nanoporous Silica Films[J].Rare Metal Materials and Engineering,2010(Z2). |
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| Authors: | Shen Jun Zhu Yumei Lin Xuejing Wu Guangming Zhou Bin Ni Xingyuan Yao Lanfang Wang Guoqing Wang Peiqing Wang Qingfeng Niu Xixian |
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| Affiliation: | Shen Jun1,Zhu Yumei1,Lin Xuejing1,Wu Guangming1,Zhou Bin1,Ni Xingyuan1,Yao Lanfang2,Wang Guoqing3,Wang Peiqing3,Wang Qingfeng3,Niu Xixian4 (1. Tongji University,Shanghai 200092,China) (2. University of Shanghai for Science , Technology,Shanghai 200093,China) (3. Shanghai Sunvea Chemical Material Co. Ltd.,Shanghai 200235,China) (4. Zhongxing Electric Automobile Corporation,Shanghai 200433,China) |
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| Abstract: | A novel route to prepare low-dielectric constant mesoporous SiO2 films was reported. Silicate sols were prepared with the precursor of TEOS and template of CTAB catalyzed by hydrochloric acid. The films were prepared by dip-coating process. FTIR, XRD and AFM were employed to characterize the films. The dielectric constants were measured by impedance analysis apparatus. These films with dielectric constants smaller than 2.2 could be acquired by adjusting the concentration of CTAB and aging time. |
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| Keywords: | low dielectric constant thin films sol-gel process |
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