|
|||||
|
|
Low frequency and microwave performances of Ba0.6Sr0.4TiO3 films on atomic layer deposited TiO2/high resistivity Si substrates |
|
| Authors: | Hyun-Suk Kim Il-Doo Kim Ki-Byoung Kim Tae-Soon Yun Jong-Chul Lee Harry L Tuller Won-Youl Choi Ho-Gi Kim |
| Affiliation: | (1) Department of Materials and Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Daejeon, 305-701, South Korea;(2) Optoelectronic Materials Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, South Korea;(3) RFIC Research and Education Center, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul, 139-703, South Korea;(4) Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA;(5) Department of Metal Engineering, Kangnung National University, Kangnung, 210-702, South Korea |
| Abstract: | We report on high tunablity of Ba0.6Sr0.4TiO3 (BST) thin films realized through the use of atomic layer deposited TiO2 films as a microwave buffer layer between BST and a high resistivity (HR) Si substrate. Coplanar waveguide (CPW) meander-line phase shifters using BST/TiO2/HR-Si and BST/MgO structures exhibited a differential phase shift of 95∘ and 24.4∘, respectively, at 15 GHz under an electric field of 10 kV/cm. The figure of merit of the phase shifters at 15 GHz was 30.6∘/dB for BST film grown on a TiO2/HR-Si substrate and 12.2∘/dB for BST film grown on a MgO single crystal substrate. These results constitute significant progress in integrating BST films with conventional silicon technology. |
| Keywords: | BST Buffer layer Coplanar waveguide Phase shifter |
| 本文献已被 SpringerLink 等数据库收录！ | |