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一种高精确度低功耗无片外电容LDO设计
引用本文:周梦嵘,段杰斌,谢 亮,金湘亮. 一种高精确度低功耗无片外电容LDO设计[J]. 太赫兹科学与电子信息学报, 2017, 15(2): 297-301
作者姓名:周梦嵘  段杰斌  谢 亮  金湘亮
作者单位:1.Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan Hunan 411105,China;2.Hunan Engineering Laboratory for Microelectronics,Optoelectronics and System on A Chip,Xiangtan Hunan 411105,China,1.Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan Hunan 411105,China;2.Hunan Engineering Laboratory for Microelectronics,Optoelectronics and System on A Chip,Xiangtan Hunan 411105,China,1.Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan Hunan 411105,China;2.Hunan Engineering Laboratory for Microelectronics,Optoelectronics and System on A Chip,Xiangtan Hunan 411105,China and 1.Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan Hunan 411105,China;2.Hunan Engineering Laboratory for Microelectronics,Optoelectronics and System on A Chip,Xiangtan Hunan 411105,China
基金项目:国家自然科学基金资助项目(61274043;61233010);湖南省自然科学杰出青年基金资助项目(2015JJ1014)
摘    要:设计了一种片上集成的高精确度、低功耗、无片外电容的低压差线性稳压器(LDO)。采用一种新型高精确度、带隙基准电压源电路降低输出电压温漂系数;采用零功耗启动电路和支路较少的摆率增强模块降低功耗,该电路采用CSMC 0.5 μm CMOS工艺。经过Cadence Spectre仿真验证,输出电压为3.3 V,在3.5~5.5 V范围内变化时,线性调整率小于0.3 mV/V,负载调整率小于0.09 mV/mA,输出电压在-40~+150 ℃范围内温漂系数达10 ppm/℃,整个LDO消耗17.7 μA的电流。

关 键 词:低压差线性稳压器;带隙基准电压源;高精确度;低功耗
收稿时间:2015-10-07
修稿时间:2015-12-30

A high precision low power capacitor-less Low Dropout Regulator
ZHOU Mengrong,DUAN Jiebin,XIE Liang and JIN Xiangliang. A high precision low power capacitor-less Low Dropout Regulator[J]. Journal of Terahertz Science and Electronic Information Technology, 2017, 15(2): 297-301
Authors:ZHOU Mengrong  DUAN Jiebin  XIE Liang  JIN Xiangliang
Abstract:
Keywords:
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