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Investigation of magnetic and ferroelectric properties along with the magnetoelectric coupling behavior for asserting a room temperature bi-phase composite as multiferroics
Authors:Parvin  Roksana  Momin  A. A.  Zubair  M. A.  Matin  M. A.  Hossain  A. K. M. Akther
Affiliation:1.Department of Physics, Bangladesh University of Engineering & Technology, Dhaka 1000, Bangladesh
;2.Department of Glass and Ceramic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh
;
Abstract:

Various composites of nominal composition (1-x)Ba0.95Ca0.05TiO3?+?xLi0.1Cu0.1Co0.1Zn0.6Fe2.1O4 have been prepared and studied thoroughly. X-ray diffraction and Rietveld refinement confirmed the presence of Ba0.95Ca0.05TiO3 and Li0.1Cu0.1Co0.1Zn0.6Fe2.1O4 phases in the composites. The microstructures have been investigated by field emission scanning electron microscopy. Temperature dependent dielectric constant shows two peaks, one is at 150 °C and another at 270 °C for x?=?0.10 composite which resembles the characteristic ferroelectric and ferromagnetic transition peaks. A gradual progression of ferro-para electric transition towards room temperature is observed with doping. The non-Debye type dipole relaxations have been found. The linearity in the log(σAC) vs. log(ω) plots indicate that conduction is due to small polaron hopping. The real part of initial permeability increases with growing ferrite concentration but the cut-off frequency decreases. The magnetic property is also enhanced with doping content. The typical ferroelectric hysteresis loops have also seen with the addition of Li0.1Cu0.1Co0.1Zn0.6Fe2.1O4 up to x?=?0.40. The impedance values are found to decreases in the Nyquist plots. The magnetoelectric voltage coefficient is obtained 287?×?103 V/mT for x?=?0.15 at room temprrature. We found both ferromagnetic and ferroelectric hysteresis loops at room temperature. So, it confirms that the composites exhibit room temperature multiferroicity. This type of composites offers variety of opportunity for multifunctional devices application like hetero-structured read / write memory devices, switching devices and magnetic field sensing devices.

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