Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors |
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Authors: | Yifan Xu Paul R Berger Jai Cho Richard B Timmons |
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Affiliation: | (1) Department of Electrical and Computer Engineering, The Ohio State University, 43210 Columbus, OH;(2) Department of Chemistry and Biochemistry, University of Texas, 76019 Arlington, TX;(3) Department of Physics, The Ohio State University, 43210 Columbus, OH |
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Abstract: | Polyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as
insulating layers of metalinsulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at plasma
reactor temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ
heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from
the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both
sample sets, the I-V data demonstrates a low leakage current value (<20 fA) up to 100 V. Capacitance-time (C-t) measurements
were also used to characterize the mobile ions in the polymer that migrate over time with applied voltage. Results indicate
that the polymer layers contain few electrically active defect centers and virtually no pinholes. Hysteresis in the C-V curves
with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of mobile charge. |
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Keywords: | Polymerized allylamine dielectrics Si MIS capacitors |
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