Low-frequency noise in TaSiN/HfO/sub 2/ nMOSFETs and the effect of stress-relieved preoxide interfacial layer

Low-frequency noise characteristics are reported for TaSiN-gated n-channel MOSFETs with atomic-layer deposited HfO/sub 2/ on thermal SiO/sub 2/ with stress-relieved preoxide (SRPO) pretreatment. For comparison, control devices were also included with chemical SiO/sub 2/ resulting from standard Radio Corporation of America clean process. The normalized noise spectral density values for these devices are found to be lower when compared to reference poly Si gate stack with similar HfO/sub 2/ dielectric. Consequently, a lower oxide trap density of /spl sim/4/spl times/10/sup 17/ cm/sup -3/eV/sup -1/ is extracted compared to over 3/spl times/10/sup 18/ cm/sup -3/eV/sup -1/ values reported for poly Si devices indicating an improvement in the high-/spl kappa/ and interfacial layer quality. In fact, this represents the lowest trap density values reported to date on HfO/sub 2/ MOSFETs. The peak electron mobility measured on the SRPO devices is over 330 cm/sup 2//V/spl middot/s, much higher than those for equivalent poly Si or metal gate stacks. In addition, the devices with SRPO SiO/sub 2/ are found to exhibit at least /spl sim/10% higher effective mobility than RCA devices, notwithstanding the differences in the high-/spl kappa/ and interfacial layer thicknesses. The lower Coulomb scattering coefficient obtained from the noise data for the SRPO devices imply that channel carriers are better screened due to the presence of SRPO SiO/sub 2/, which, in part, contributes to the mobility improvement.