| 基于STI工艺的高压LDMOS器件设计与优化 |
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| 引用本文： | 周杰,陈利,郭东辉. 基于STI工艺的高压LDMOS器件设计与优化[J]. 中国集成电路, 2010, 19(12): 46-52 |
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| 作者姓名： | 周杰 陈利 郭东辉 |
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| 作者单位： | [1]厦门大学物理系,福建厦门361005 [2]厦门大学电子工程系,福建厦门361005 |
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| 摘 要： | 在LDMOS功率器件设计中可以引入STI工艺替代LOCOS工艺来进一步抑制表面电荷效应,以提高LDOMS功率器件的耐压强度及降低比导通电阻。本文将介绍STI工艺的优势和LDMOS器件设计原理,并在TSMC 0.6μm BCD工艺为基础上增加STI工艺流程来设计一款适用于汽车电子应用的40V LDMOS器件。通过ATHENA（工艺模拟）和ATLAS（器件仿真）仿真实验与器件参数提取,表明采用STI工艺的LDMOS器件比采用LOCOS工艺的LDMOS器件在耐压漂移区长度比方面提高了23.40%,且比导通电阻降低了66.12%。
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| 关 键 词： | LDMOS STI工艺 高压器件 |
Optimization and design of LDMOS Based on STI Technology |
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| ZHOU Jie,CHEN Li,GUO Dong-hui. Optimization and design of LDMOS Based on STI Technology[J]. China Integrated Circuit, 2010, 19(12): 46-52 |
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| Authors: | ZHOU Jie CHEN Li GUO Dong-hui |
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| Affiliation: | 1.Dept.of Phys.,Xiamen Univ.,Xiamen,Fujian 361005,P.R.China;2.Dept.of Elec.,Xiamen Univ.,Xiamen,Fujian 361005,P.R.China) |
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| Abstract: | For suppressing the surface charge effect to obtain higher breakdown voltage and lower Ron,sp,we choose STI technology to replace STI technology.The paper will introduce the superiority of STI technology and the basic principles of LDMOS design,and a 40V LDMOS based on TSMC 0.6um BCD technology added with STI technology will be designed for automotive applications.Using ATHENA and ATLAS to simulate the devices and extract the parameters of LDMOS,the data shows that the LDMOS with STI technology have better performance compare with the LDMOS with LOCOS technology,for the breakdown voltage VS the length of drift increased 23.4% and the decreased 66.12%. |
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| Keywords: | LDMOS STI High-voltage device |
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