一种K波段双桥电容式RF MEMS开关的设计与制作

介绍了一种K波段双桥结构的电容式RF MEMS开关．该开关的结构特点是，以共面波导上的悬空金属膜为双桥结构，并且膜桥的支撑呈折叠弹簧结构．使用Agilent ADS软件对该开关进行了设计和优化，结果表明，相比传统电容式单桥开关，该开关隔离度性能得到了很大提高．利用表面微机械工艺，在高阻硅衬底上制备了开关样品．双桥开关的在片测试结果表明：驱动电压为19.5V，“开”态的插入损耗约1.6dB@19.6GHz，“关”态的隔离度约46.0dB@19.6GHz．

Design and Fabrication of K-Band Double Bridge Capacitive MEMS Switches

Design and fabrication of a novel K-band capacitive RF MEMS switch are reported.The switch consists of two suspended metallic membranes supported by a serpentine flexible spring over a coplanar waveguide.The design,which is realized with commercial EDA tools,is optimized based on a series of simulations.The simulations show that the proposed switch structure presents improved isolation in a relatively low RF frequency (K band).This switch is made using a silicon surface micromachining process.On wafer measurement is carried out.The threshold voltage is less than 19.5V,the insertion loss is 1.6dB@19.6GHz,and the isolation is 46.0dB@19.6GHz.