Erbium and Germanium Profiles in Si1 – xGe
x
Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH4 |
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| Authors: | V G Shengurov S P Svetlov V Yu Chalkov B A Andreev Z F Krasil'nik B Ya Ber Yu N Drozdov |
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| Affiliation: | (1) Research Physicotechnical Institute, Lobachevski State University, pr. Gagarina 23/3, Nizhni Novgorod, 603000, Russia;(2) Institute of Physics of Microstructures, Nizhni Novgorod, 603000, Russia;(3) Russian Academy of Sciences, Ioffe Physicotechnical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | The Ge and Er depth profiles in Si1 – x
Ge
x
layers grown on Si(100) substrates by Si sublimation-source molecular-beam epitaxy in GeH4 were studied by secondary ion mass spectrometry. The results demonstrate that Ge facilitates Er incorporation into the growing Si–Ge layer. The Er dopant profile becomes sharper with increasing Ge content. The Ge profile also has rather sharp boundaries, indicating that there is no Ge surface segregation, which is attributable to the presence of adsorbed hydrogen, acting as a surfactant. |
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