Potential and current distributions along resistive electrodes

A simple theory of current and potential distributions along resistive electrodes is re-examined and generalized for non-linearized Tafel behavior. A model of a passivating electrode is discussed and the generalized theory extended to derive expressions for the current and potential profiles along a partially passivated electrode. The relevant expressions permit a predictive analysis of the feasibility of using the electrochemical passivation method for etch-stop control in fabrication of thin, single crystal silicon structures produced by anisotropic deep etching.