| 三元层状碳化物Ti3SiC2的研究进展 |
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| 引用本文： | 朱教群,梅炳初,陈艳林.三元层状碳化物Ti3SiC2的研究进展[J].材料科学与工程学报,2001,19(4):105-109. |
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| 作者姓名： | 朱教群 梅炳初 陈艳林 |
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| 作者单位： | 1. 武汉理工大学测试中心,
2. 武汉理工大学 |
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| 基金项目： | 山东省自然科学基金，， |
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| 摘 要： | 本文综合介绍Ti3SiC2的最新研究进展.三元碳化物Ti3SiC2属于层状六方晶体结构,空间群为P63/mmC;它同时具有金属和陶瓷的优良性能,有良好的导电和导热能力,高弹性模量和低维氏显微硬度,在室温下可切削加工,在高温下能产生塑性变形,良好的高温热稳定性和优秀的抗氧化性能;应用CVD、SHS、HP/HIP等方法可制备该化合物,用HIP方法能制备高纯、致密的Ti3SiC2陶瓷;Ti3SiC2陶瓷材料自身有抵抗损伤的机理.
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| 关 键 词： | Ti3SiC2 结构 性能 制备 抗损伤 |
| 文章编号： | 1004-793X(2001)04-0105-05 |
| 修稿时间： | 2001年6月2日 |
On the Ternary Carbide Ti3SiC2 |
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| ZHU Jiao qun ,MEI Bing chu ,CHEN Yan lin.On the Ternary Carbide Ti3SiC2[J].Journal of Materials Science and Engineering,2001,19(4):105-109. |
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| Authors: | ZHU Jiao qun MEI Bing chu CHEN Yan lin |
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| Affiliation: | ZHU Jiao qun 1,MEI Bing chu 2,CHEN Yan lin 2 |
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| Abstract: | The research progress on the ternary carbide Ti 3SiC 2 is summarized in the present paper. The ternary carbide Ti 3SiC 2 has hexagonal crystal structure with space group of P6 3/mmc, and has the merits of both metals and ceramics, good electricity and heat conductivity, high Young's modulus and low Vickers hardness, good ductility at high temperature, excellent chemical stability at high temperature, easy to be machined at the room temperature, good oxidation resistance, and high to thermal shock resistance. It can be synthesized by CVD, SHS, HP/HIP, and dense Ti 3SiC 2 ceramics with high purity can be synthexized by HIP. Moreover, Ti 3SiC 2 ceramics have the mechanism for damage tolerant. |
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| Keywords: | Ti 3SiC 2 structure property synthesis damage tolerant |
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