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a-C:N膜的制备及结构分析
引用本文:张贵锋,张建宏,耿东生,刘正堂,郑修麟.a-C:N膜的制备及结构分析[J].材料工程,1997(3):10-12.
作者姓名:张贵锋  张建宏  耿东生  刘正堂  郑修麟
作者单位:西北工业大学材料科学与工程学院
摘    要:采用射频溅射法在锗衬底上沉积无定形碳氮膜 (a- C:N) ,用 X射线光电子谱 (XPS)、傅立叶变换红外光谱 (FT- IR)和喇曼光谱 (RS)分析了膜的成分与结构。结果表明 ,氮是以化学键的形式存在于膜中 ,且有三种不同的 C- N键合状态。随着反应气体中氮气分压的增加 ,a- C:N膜中氮浓度增加 ,C≡N键的含量增加。

关 键 词:射频溅射  无定形碳氮膜  结构

Preparation and Structure Analysis of Amorphous Carbon Nitride Films
Zhang Guifeng,Zhang Jianhong,Geng Dongsheng,Liu Zhengtang,Zheng Xiulin.Preparation and Structure Analysis of Amorphous Carbon Nitride Films[J].Journal of Materials Engineering,1997(3):10-12.
Authors:Zhang Guifeng  Zhang Jianhong  Geng Dongsheng  Liu Zhengtang  Zheng Xiulin
Abstract:Amorphous carbon nitride films(a- C:N) have been grown on Ge substrate us- ing radio frequency sputtering of graphite in nitrogen and acetylene plasma. The structure and composition of a- C:N films were analyzed by X- ray photoelectron spectroscopy (XPS) ,infrared absorption (FT- IR) and Raman spectroscopies (RS) . The results indicate that the incorporated nitrogen is chemically bonded to carbon.The concentration of the incorporated nitrogen and triple bonded CN in a- C:N films increased with increasing of nitrogen content in mixture gas.
Keywords:rf sputtering  amorphous carbon nitride films  structure  
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