| 半导体双光子吸收的阈值光强研究 |
| |
| 引用本文： | 张学如 李淳飞. 半导体双光子吸收的阈值光强研究[J]. 红外与毫米波学报, 1996, 15(4): 309-312 |
| |
| 作者姓名： | 张学如 李淳飞 |
| |
| 作者单位： | 哈尔滨工业大学应用物理系 |
| |
| 摘 要： | 研究非共振条件下光脉冲在半导体中传输引起的非线性吸收动力学过程，在薄样品近似下推导了描术双光子吸收及其诱导自由载流子吸收相对强弱的阈值光强公式，分析了样品厚度对阈值光强的影响，解释ＧａＡｓ双光子吸收系数的测量值在很大范围内变化的主要原因。
|
| 关 键 词： | 双光子吸收 自由载流子 阈值光强 半导体材料 |
STUDY OF THRESHOLD INTENSITY OF TWO PHOTON ABSORPTION IN SEMICONDUCTORS |
| |
| Zhang Xueru Li Chunfei. STUDY OF THRESHOLD INTENSITY OF TWO PHOTON ABSORPTION IN SEMICONDUCTORS[J]. Journal of Infrared and Millimeter Waves, 1996, 15(4): 309-312 |
| |
| Authors: | Zhang Xueru Li Chunfei |
| |
| Abstract: | The dynamic process of nonlinear absorption in a semiconductor medium caused by nonlinear optical pulse propagation in the condition of nonresonance was studied.The threshold intensity formula was deduced in the limit of small absorption,which describes the relative size of two photon absorption and free carrier absorption.The effect of the sample thickness on the threshold intensity was analyzed.The main origin of the great disparity in the measured values of two photon absorption coefficient of GaAs was explained. |
| |
| Keywords: | two-photon absorption free carrier absorption threshold intensity. |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
