Doping of Si into GaN nanowires and optical properties of resulting composites |
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Authors: | Xu Congkang Chung Sangyong Kim Misuk Kim Dong Eon Chon Bonghwan Hong Sangsu Joo Taiha |
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Affiliation: | Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang 790-784, South Korea. |
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Abstract: | Doping of Si into GaN nanowires has been successfully attained via thermal evaporation in the presence of a suitable gas atmosphere. Analysis indicated that the Si-doped GaN nanowire is a single crystal with a hexagonal wurtzite structure, containing 2.2 atom % of Si. The broadening and the shift of Raman peak to lower frequency are observed, which may be attributed to surface disorder and various strengths of the stress. The band-gap emission (358 nm) of Si-doped GaN nanowires relative to that (370 nm) of GaN nanowires has an apparent blue shift (approximately 12 nm), which can be ascribed to doping impurity Si. |
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