Electrical and optical activation studies of Si-implanted GaN |
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Authors: | James A. Fellows Y. K. Yeo Mee-Yi Ryu R. L. Hengehold |
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Affiliation: | (1) Air Force Institute of Technology, 45433 Wright-Patterson AFB, OH;(2) Department of Physics, Kangwon National University, 200-701 Kangwon-Do, Korea |
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Abstract: | Comprehensive and systematic electrical and optical activation studies of Si-implanted GaN were made as a function of ion dose and anneal temperature. Silicon ions were implanted at 200 keV with doses ranging from 1×1013 cm?2 to 5×1015 cm?2 at room temperature. The samples were proximity-cap annealed from 1050°C to 1350°C with a 500-Å-thick AlN cap in a nitrogen environment. The optimum anneal temperature for high dose implanted samples is approximately 1350°C, exhibiting nearly 100% electrical activation efficiency. For low dose (≤5×1014 cm?2) samples, the electrical activation efficiencies continue to increase with an anneal temperature through 1350°C. Consistent with the electrical results, the photoluminescence (PL) measurements show excellent implantation damage recovery after annealing the samples at 1350°C for 20 sec, exhibiting a sharp neutral-donor-bound exciton peak along with a sharp donor-acceptor pair peak. The mobilities increase with anneal temperature, and the highest mobility obtained is 250 cm2/Vs. The results also indicate that the AlN cap protected the implanted GaN layer during high-temperature annealing without creating significant anneal-induced damage. |
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Keywords: | GaN Hall-effect measurement photoluminescence (PL) implantation activation mobility |
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