| 溅射原子的初始位置分布和表面出口位置分布 |
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| 引用本文： | 郑里平,崔福斋. 溅射原子的初始位置分布和表面出口位置分布[J]. 半导体学报, 1988, 9(3): 288-293 |
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| 作者姓名： | 郑里平 崔福斋 |
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| 作者单位： | 中国科学院上海原子核研究所，清华大学，中国科学院上海冶金研究所离子束开放研究实验室 上海，北京 |
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| 摘 要： | 用物理溅射的Monte Carlo模拟程序TCISIS,研究了在O~+离子与Ar~+离子轰击下Al靶与Si靶的溅射原子的初始位置分布和表面出口位置分布.讨论了离子束溅射横向可达分辨率的物理限制.所计算的溅射原子的初始位置分布和表面出口位置分布的宽度,对于离子束溅射刻蚀的微细加工和SLMS设计是有参考价值的.计算的溅射原子的逃逸深度分布表明,溅射原子的大多数来自于表面前2个原子层.
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| 关 键 词： | 原子碰撞级联 计算机模拟 溅射刻蚀 二次离子质谱 |
Distribution of Origins and Exits of Sputtered Atoms |
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| Zheng Liping/. Distribution of Origins and Exits of Sputtered Atoms[J]. Chinese Journal of Semiconductors, 1988, 9(3): 288-293 |
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| Authors: | Zheng Liping/ |
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| Affiliation: | Zheng Liping/Shanghai Institute of Nuclear Research,Academia Sinica,ShanghaiCui Fuzhai/Department of Engineering Physics,Qiunghuai University,BeijingIon Beam Laboratory Shanghai Institute of Metallargy,Academia Sinica,Shanghai |
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| Abstract: | Distribution of origins and exits of Al and Si sputtered atoms under O~+ and Ar~+ ionsbombardment has been studied by simulation program TCISIS.Concerninng the width of sput-tering location distribution,radial locations of sputtered particls around ion beam axis in the solidsurface have been recorded. The evidences that most of the sputtered atoms eject from thefirst two surface layers have been provided.The given width of sputtering location distribu-tion is available for superfine sputtering etching and SIMS design. |
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| Keywords: | Atomic collision cascade Computer simulation Spurttering etching SIMS |
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