| Abstract: | In this paper, MOS‐triggered silicon‐controlled rectifier (SCR)–based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR‐based ESD protection circuits with floating  diffusion regions for inverter and light‐emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded‐gate NMOS (ggNMOS) in the MOS‐triggered SCR‐based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P‐well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the  floating diffusion region. The trigger voltage was improved by the partial insertion of a P‐body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low‐ and high‐voltage applications were designed using 0.18 µm Bipolar‐CMOS‐DMOS technology, with 100 µm width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS‐6008). |
