| 氮气压对自蔓延高温合成AlN后烧的影响 |
| |
| 引用本文： | 王华彬,韩杰才,郑永挺,杜善义. 氮气压对自蔓延高温合成AlN后烧的影响[J]. 材料研究学报, 2000, 14(Z1): 158-162 |
| |
| 作者姓名： | 王华彬 韩杰才 郑永挺 杜善义 |
| |
| 作者单位： | 哈尔滨工业大学 |
| |
| 摘 要： | 研究了氮气压力对自蔓延高温合成AlN的影响和后烧机理.结果表明,自蔓延高温合成AlN的生长机制为气相-晶体(Vapor-Crystal,VC)机制.气相沉积的台阶平面为AlN的基面({0001)面).为了降低表面能,生长台阶必须以六棱柱形态形核.在后烧阶段,AlN颗粒中心的小台阶被重新"蒸发",并沉积到远离中心的大台阶上,使AlN颗粒棱角分明,形状规则.随着氮气压力的增加,燃烧温度逐渐提高,后烧的时间缩短.
|
| 关 键 词： | 自蔓延燃烧合成 氮化铝 后烧 |
| 文章编号： | 1005-3093(2000)S0-0158-05 |
| 修稿时间： | 1999-05-31 |
EFFECT OF NITROGEN PRESSURE ON AFTERBURNING OF SHS AlN |
| |
| WANG Huabin,HAN Jiecai,ZHENG Yongting,DU Shanyi. EFFECT OF NITROGEN PRESSURE ON AFTERBURNING OF SHS AlN[J]. Chinese Journal of Materials Research, 2000, 14(Z1): 158-162 |
| |
| Authors: | WANG Huabin HAN Jiecai ZHENG Yongting DU Shanyi |
| |
| Abstract: | Afterburning of SHS AIN under different nitrogen pressure and its mechanism were investigated. The results showed that growth mechanism was the vapor-crystal (VS) one." AIN vapor,, deposited on the {0001} plane (hasal plane) steps of AIN particles. The little nucleated steps must be regular hexagon in order to decrease surface energy. During afterburning, the little steps at the center will re-vaporize and move to the larger steps, which made AIN particle become regular. With increasing of nitrogen pressure, combustion temperature increased, and the time of afterburning decreased. |
| |
| Keywords: | Self-propagating high-temperature synthesis (SHS) AIN afterburning |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
