Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits |
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| Guang Yang, Hao Luo, Jiajun Li, Qinqin Shao, Yazhe Wang, Ruzhong Zhu, Xi Zhang, Lihui Song, Yiqiang Zhang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits[J]. Journal of Semiconductors, 2022, 43(12): 122801. doi: 10.1088/1674-4926/43/12/122801 G Yang, H Luo, J J Li, Q Q Shao, Y Z Wang, R Z Zhu, X Zhang, L H Song, Y Q Zhang, L B Xu, C Cui, X D Pi, D R Yang, R Wang. Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits[J]. J. Semicond, 2022, 43(12): 122801. doi: 10.1088/1674-4926/43/12/122801Export: BibTex EndNote |
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| Authors: | Guang Yang Hao Luo Jiajun Li Qinqin Shao Yazhe Wang Ruzhong Zhu Xi Zhang Lihui Song Yiqiang Zhang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang |
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| Affiliation: | 1. Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China;2. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;3. Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China;4. School of Materials Science and Engineering & Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450001, China |
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| Abstract: | Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide (4H-SiC), which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers. In this work, we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations (TSDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) in 4H-SiC. In n-type 4H-SiC, the inclination angles of the etch pits of TSDs, TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°, 8°−15° and 2°−4°, respectively. In semi-insulating 4H-SiC, the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34° and 21°−24°, respectively. The inclination angles of dislocation-related etch pits are independent of the etching duration, which facilitates the discrimination and statistic of dislocations in 4H-SiC. More significantly, the inclination angle of a threading mixed dislocations (TMDs) is found to consist of characteristic angles of both TEDs and TSDs. This enables to distinguish TMDs from TSDs in 4H-SiC. |
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| Keywords: | 4H-SiC single crystals dislocations molten-alkali etching |
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