| 低温生长金刚石薄膜及其界面结构X-射线衍射研究 |
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| 引用本文： | 吕反修, 蒋高松, 杨保雄. 低温生长金刚石薄膜及其界面结构X-射线衍射研究[J]. 工程科学学报, 1992, 14(4): 423-429. DOI: 10.13374/j.issn1001-053x.1992.04.021 |
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| 作者姓名： | 吕反修 蒋高松 杨保雄 |
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| 摘 要： | 采用X-射线衍射(包括小角度衍射方法)研究了低温气相生长金刚石薄膜和单晶硅衬底之间的界面过度层。发现在较高温度下(700℃)过渡层为α-SiC,在较低沉积温度范围(580-290)℃过渡层则由α-SiC和SiO2所构成。对界面层中α-SiC和SiO2的晶体结构以及金刚石薄膜面间距进行了讨论。
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| 关 键 词： | 金刚石薄膜 低温沉积 界面过度层 X-射线衍射 |
| 收稿时间： | 1992-03-23 |
X-Ray Diffraction Study of the Interface Layer of Low Temperature Deposited Diamond Films |
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| Lu Fanxiu, Jiang Gaosong, Yang Baoxiong. X-Ray Diffraction Study of the Interface Layer of Low Temperature Deposited Diamond Films[J]. Chinese Journal of Engineering, 1992, 14(4): 423-429. DOI: 10.13374/j.issn1001-053x.1992.04.021 |
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| Authors: | Lu Fanxiu Jiang Gaosong Yang Baoxiong |
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| Abstract: | The constituent and the structure of the interface layer between the low temperature deposited diamond films and the single crystal silicon substrate was studed by X-ray diffraction (including small angle diffraction) technique. It was found that the interface layer for diamond film deposited at 700℃ was α-SiC. At lower temperature range (580-290)℃, the interface layer was composed of α-SiC and SiO2. Crystal structure of α-SiC and SiO2, and the d-spacings of the diamond films were discussed. |
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| Keywords: | diamond films low temperature deposition iaterface layer X-ray diffraction |
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