W-band low-noise InAlAs/InGaAs lattice-matched HEMTs |
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| Authors: | Chao PC Tessmer AJ Duh K-HG Ho P Kao M-Y Smith PM Ballingall JM Liu S-MJ Jabra AA |
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| Affiliation: | Gen. Electr. Co., Syracuse, NY; |
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| Abstract: | Very low-noise 0.15-μm gate-length W-band In0.52 Al0.48As/In0.53Ga0.47As/In 0.52Al0.48As/InP lattice-matched HEMTs are discussed. A maximum extrinsic transconductance of 1300 mS/mm has been measured for the device. At 18 GHz, a noise figure of 0.3 dB with an associated gain of 17.2 dB was measured. The device also exhibited a minimum noise figure of 1.4 dB with 6.6-dB associated gain at 93 GHz. A maximum available gain of 12.6 dB at 95 GHz, corresponding to a maximum frequency of oscillation, fmax, of 405 GHz (-6-dB/octave extrapolation) in the device was measured. These are the best device results yet reported. These results clearly demonstrate the potential of the InP-based HEMTs for low-noise applications, at least up to 100 GHz |
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