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镍铬薄膜电阻器噪声特性研究
引用本文:吴勇,杜磊,庄奕琪,魏文彦,仵建平. 镍铬薄膜电阻器噪声特性研究[J]. 电子元件与材料, 2006, 25(1): 55-58,65
作者姓名:吴勇  杜磊  庄奕琪  魏文彦  仵建平
作者单位:西安电子科技大学微电子学院,陕西,西安,710071;西安电子科技大学技术物理学院,陕西,西安,710071;中国航天时代电子公司第七七一研究所,陕西,西安,710054
摘    要:薄膜电阻器的低频噪声有别于常规电阻器的噪声特征,与其结构和工艺密切相关。通过溅射工艺生产的阻值为1.5k?镍铬薄膜电阻器分别在生产完成和1000h老化试验之后进行了低频噪声测量和分析得到器件低频噪声特征,结合电子元器件低频噪声理论探讨了器件中各种噪声成分的来源及产生机制并给出该镍铬薄膜电阻生产线降低噪声的工艺手段。并讨论了电迁移损伤对1/f噪声特征的影响,指出噪声的异常波动对电迁移损伤具有明确的指示作用。

关 键 词:电子技术  镍铬薄膜电阻  低频噪声  1/f噪声  g-r噪声  噪声来源  电迁移
文章编号:1001-2028(2006)01-0055-04
收稿时间:2005-08-15
修稿时间:2005-08-15

Investigation of Noise Properties in NiCr Thin-film Resistor
WU Yong,DU Lei,ZHUANG Yi-qi,WEI Wen-yan,WU Jian-ping. Investigation of Noise Properties in NiCr Thin-film Resistor[J]. Electronic Components & Materials, 2006, 25(1): 55-58,65
Authors:WU Yong  DU Lei  ZHUANG Yi-qi  WEI Wen-yan  WU Jian-ping
Abstract:Low frequency noise of thin-film resistor associate with it’s micro-structures and technics closely.Low frequency noise data in different periods of three 1.5 k? NiCr thin-film resistors was measured.The resistor’s noise characters and sources were discussed,the methods of reducing the noise were given.Furthermore,relationships between 1/ f noise and electromigration in NiCr thin-film resistor were analyzed,the abnormal changes of noise can indicate electromigration destroy clearly.
Keywords:electronic technology  NiCr thin-film resistor  low frequency noise  1/ f noise  g-r noise  noise sources  electromigration
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