| 氙光作用后半绝缘4H-SiC外延片本征缺陷的ESR谱特性 |
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| 引用本文： | 程萍,张玉明,张义门,郭辉.氙光作用后半绝缘4H-SiC外延片本征缺陷的ESR谱特性[J].半导体学报,2009,30(12):123002-4. |
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| 作者姓名： | 程萍 张玉明 张义门 郭辉 |
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| 作者单位： | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University; |
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| 基金项目： | supported by the National Natural Science Foundation of China(No.60606022); the Advanced Fund(No.9140A08050508); the Applied Materials Innovation Fund (Nos.XA-AM-200607,XA-AM-200704) |
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| 摘 要： | The intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by low pressure chemical vapor deposition （LPCVD） are studied by electron spin resonance （ESR） with different illumination times. The results show that the intrinsic defects in as-grown 4H-SiC consist of carbon vacancy （Vc） and complex-compounds-related Vc. There are two other apexes presented in the ESR spectra after illumination by Xe light, which are likely to be Vsi and VcCsi. Illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of Vc to complex compounds is minimized simultaneously. It can be deduced that some Vsi may be transformed to the complex-compounds-related Vc because of the illumination.
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| 关 键 词： | 固有缺陷 照明时间 ESR谱 半绝缘 氙灯 低压化学气相沉积 字符 电子自旋共振 |
ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light |
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| Cheng Ping,Zhang Yuming,Zhang Yimen and Guo Hui.ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light[J].Chinese Journal of Semiconductors,2009,30(12):123002-4. |
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| Authors: | Cheng Ping Zhang Yuming Zhang Yimen and Guo Hui |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | The intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by low pressure chemical vapor deposition (LPCVD) are studied by electron spin resonance (ESR) with different illumination times. The results show that the intrinsic defects in as-grown 4H-SiC consist of carbon vacancy (VC) and complex-compounds-related VC. There are two other apexes presented in the ESR spectra after illumination by Xe light, which are likely to be VSi and VCCSi. Illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of VC to complex compounds is minimized simultaneously. It can be deduced that some VSi may be transformed to the complex-compounds-related VC because of the illumination. |
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| Keywords: | electron spin resonance low pressure chemical vapor deposition intrinsic defects semi-insulating 4H-SiC |
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