Optical and Electrical Properties of Cu2ZnSnS4 Film Prepared by Sulfurization Method |
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| Authors: | Feng Jiang Honglie Shen Wei Wang |
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| Affiliation: | 1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing, 210016, People’s Republic of China
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| Abstract: | Cu2ZnSnS4 (CZTS) films were prepared by sulfurization of sputtered Zn/Sn/Cu multilayer thin films. Raman peaks at 251 cm?1, 289 cm?1, 336 cm?1, and 362 cm?1 were detected, and the optical band gap energy of the CZTS was estimated to be about 1.53 eV. Energy-dispersive spectrometry and x-ray photoelectron spectroscopy reveal that the composition ratio of prepared CZTS film is close to stoichiometric. Photoresponse current measurements show persistent photoconductivity effect, with decay constants τ and β of 5.04 and 0.269, respectively. |
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