| 高压偏移栅PMOSFET击穿电压的电离辐照响应 |
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| 引用本文： | 高文钰 赵元富. 高压偏移栅PMOSFET击穿电压的电离辐照响应[J]. 核技术, 1993, 16(1): 1-5 |
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| 作者姓名： | 高文钰 赵元富 |
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| 作者单位： | 中国科学院新疆物理研究所，中国科学院新疆物理研究所，中国科学院新疆物理研究所，中国科学院新疆物理研究所，骊山微电子公司，骊山微电子公司 乌鲁木齐 830011，乌鲁木齐 830011，乌鲁木齐 830011，乌鲁木齐 830011，陕西 710000，陕西 710000 |
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| 摘 要： | 揭示了辐照引起击穿电压变化的机制,提出了提高高压偏移栅PMOSFET击穿电压抗电离辐照的方法。对辐照后击穿电压退火特性进行了研究。
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| 关 键 词： | 击穿电压 辐照 电离辐射 MOS电路 |
Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs |
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| Gao Wenyu Ren Diyuan Lu Wu Yan Rongliang. Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs[J]. Nuclear Techniques, 1993, 16(1): 1-5 |
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| Authors: | Gao Wenyu Ren Diyuan Lu Wu Yan Rongliang |
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| Abstract: | Ionizing radiation responses of breakdown voltage are studied for the high voltage offset- gated P- channel MOSFETs. It is shown that the variation of breakdown voltage after irradiation results from the charges induced by irradiation near the field SiO2/ Si interface. The ionizing radiation hardening methods for this kind of devices are proposed. The annealing effects on breakdown voltage are also investigated. |
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| Keywords: | Ionizing irradiation HVPMOSFET Breakdown voltage Charges induced by irradiation |
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