Temperature-dependent short-channel parameters of FinFETs

The remarkable development and continual proliferation of research in the nanotechnology field have led to improvement in the efficiency of elementary devices. To improve their performance, the parameters of such devices can be scaled down while optimizing their characteristics. However, this simultaneously results in degraded switching characteristics and the appearance of short-channel effects. Multigate-based fin-shaped field-effect transistors (FinFETs) represent a new option to address all these problems. However, thermal failure of FinFET devices under nominal operating conditions is an important issue in the design and implementation of high-speed semiconductor devices. It is also seen that bulk FinFETs exhibit better thermal performance compared with silicon-on-insulator FinFETs. In the work presented herein, various FinFET characteristics including the subthreshold swing, drain-induced barrier lowering, threshold voltage, and drain current were investigated as functions of temperature. The (effective) channel length is larger than the physical gate length (in off-state) due to the undoped underlap regions. This paper also discusses the effects of drain, source, and gate overlap.